Showing 1633–1644 of 1710 results

TPC8089-H

200.00
This N-Channel MOSFET employs cutting-edge trench technology to achieve high RDS(on) while maintaining a low gate charge. It can be applied to a wide range of situations.
Features?
1)VDS=40V,ID=6.7A,RDS(ON)<32m?@VGS=10V
2)Low gate charge.
3)Green device available.
4)Advanced high cell denity trench technology for ultra R
DS(ON).
5)Excellent package for good heat dissipation

TYN616 – 600V – 16A SCR – Thyristor

40.00
The standard TYN61616 A SCRs series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

U403

1,058.00
The -50V InterFET IFNU401, IFNU402, and IFNU403 JFET?s are targeted for low noise differential amplifier designs. Gate leakages are less than 10pA at room temperatures. The TO-71 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available.