TPC8089-H
This N-Channel MOSFET employs cutting-edge trench technology to achieve high RDS(on) while maintaining a low gate charge. It can be applied to a wide range of situations.
Features?
1)VDS=40V,ID=6.7A,RDS(ON)<32m?@VGS=10V
2)Low gate charge.
3)Green device available.
4)Advanced high cell denity trench technology for ultra R
DS(ON).
5)Excellent package for good heat dissipation
TYN616 – 600V – 16A SCR – Thyristor
U403
The -50V InterFET IFNU401, IFNU402, and
IFNU403 JFET?s are targeted for low noise
differential amplifier designs. Gate leakages are
less than 10pA at room temperatures. The TO-71
package is hermetically sealed and suitable for
military applications. Custom specifications,
matching, and packaging options are available.