DS1225AB-150+
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled unconditionally to avoid data corruption. The NV SRAMs can be used in place of existing 8k ? 8 SRAMs that are directly compatible with the common bytewide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for straightforward replacement while improving performance. The number of write cycles that can be performed is not limited, and no additional support circuitry is required for microprocessor connection.
DS1225AB-200+
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled unconditionally to avoid data corruption. The NV SRAMs can be used in place of existing 8k ? 8 SRAMs that are directly compatible with the common bytewide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for straightforward replacement while improving performance. The number of write cycles that can be performed is not limited, and no additional support circuitry is required for microprocessor connection.
DS1225AB-70+
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled unconditionally to avoid data corruption. The NV SRAMs can be used in place of existing 8k ? 8 SRAMs that are directly compatible with the common bytewide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for straightforward replacement while improving performance. The number of write cycles that can be performed is not limited, and no additional support circuitry is required for microprocessor connection.
DS1225AD-150+
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled permanently to avoid data corruption. The NV SRAMs can be used in place of conventional 8k ? 8 SRAMs that are directly compatible with the common byte wide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for direct replacement while improving performance. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
DS1225AD-170+
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled permanently to avoid data corruption. The NV SRAMs can be used in place of conventional 8k ? 8 SRAMs that are directly compatible with the common byte wide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for direct replacement while improving performance. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
DS1225AD-200+
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled permanently to avoid data corruption. The NV SRAMs can be used in place of conventional 8k ? 8 SRAMs that are directly compatible with the common byte wide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for direct replacement while improving performance. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
DS1225AD-70+
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled permanently to avoid data corruption. The NV SRAMs can be used in place of conventional 8k ? 8 SRAMs that are directly compatible with the common byte wide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for direct replacement while improving performance. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
DS1225AD-85+
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled permanently to avoid data corruption. The NV SRAMs can be used in place of conventional 8k ? 8 SRAMs that are directly compatible with the common byte wide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for direct replacement while improving performance. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
DS1230Y-100+
The DS1230 256k Nonvolatile SRAMs have a capacity of 262,144 bits and are structured as 32,768 words by 8 bits. Each NV SRAM contains a self-contained lithium energy source and control circuitry that constantly monitors VCC for out-of-tolerance conditions. When such a circumstance happens, the lithium energy source is automatically activated, and write protection is engaged unconditionally to prevent data corruption. DIP-package DS1230 devices can be utilized in place of current 32k ? 8 static RAMs that directly comply to the common byte wide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing for direct substitution while improving performance. The Low Profile Module package of DS1230 devices is specifically suited for surface-mount applications. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
DS1230Y-120+
The DS1230 256k Nonvolatile SRAMs have a capacity of 262,144 bits and are structured as 32,768 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled unconditionally to avoid data corruption. The DS1230 DIP-package devices can be utilized in place of current 32k ? 8 static RAMs that directly comply to the common byte wide 28-pin DIP standard. The pinout of the DIP devices matches that of the 28256 EEPROMs, allowing for straightforward substitution while improving performance. The Low Profile Module package of DS1230 devices is specifically suited for surface-mount applications. The number of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
DS1230Y-150+
The DS1230 256k Nonvolatile SRAMs have a capacity of 262,144 bits and are structured as 32,768 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled unconditionally to avoid data corruption. The DS1230 DIP-package devices can be utilised in place of current 32k ? 8 static RAMs that directly comply to the common byte wide 28-pin DIP standard. The pinout of the DIP devices matches that of the 28256 EEPROMs, allowing for straightforward substitution while improving performance. The Low Profile Module package of DS1230 devices is specifically suited for surface-mount applications. There is no limit to the number of write cycles that can be performed.
DS1230Y-200+
The DS1230 256k Nonvolatile SRAMs have a capacity of 262,144 bits and are structured as 32,768 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled unconditionally to avoid data corruption. The DS1230 DIP-package devices can be utilized in place of current 32k ? 8 static RAMs that directly comply to the common byte wide 28-pin DIP standard. The pinout of the DIP devices matches that of the 28256 EEPROMs, allowing for straightforward substitution while improving performance. The DS1230 devices in the Low Profile Module package are developed primarily for surface-mount applications. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
