The DS1230 256k Nonvolatile SRAMs have a capacity of 262,144 bits and are structured as 32,768 words by 8 bits. Each NV SRAM contains a self-contained lithium energy source and control circuitry that constantly monitors VCC for out-of-tolerance conditions. When such a circumstance happens, the lithium energy source is automatically activated, and write protection is engaged unconditionally to prevent data corruption. DIP-package DS1230 devices can be utilized in place of current 32k ? 8 static RAMs that directly comply to the common byte wide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing for direct substitution while improving performance. The Low Profile Module package of DS1230 devices is specifically suited for surface-mount applications. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.