IRFI840GLC
IRFIBE30G
IRFP044N MOSFET – 55V 53A N-Channel HEXFET Power MOSFET TO-247 Package
IRFP044N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficienc
IRFP054N
IRFP054N MOSFET – 55V 81A N-Channel HEXFET Power MOSFET TO-247 Package
IRFP054N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
IRFP064N
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Ultra Low On- Resistance
? Very Low Thermal Resistance
? Isolated Central Mounting Hole
? 175 ?C Operating Temperature
? Fast Switching
? Compliant to RoHS Directive 2002/95/EC
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
IRFP140N
IRFP140N MOSFET – 100V 33A N-Channel Power MOSFET TO-247 Package
IRFP140N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.