IRFP4668
BRAND - DOINGTER ONLY
Applications
SMPS Uninterruptible Power Supply with High Efficiency Synchronous Rectification
Circuits with High Frequency and Tough Switched Power Switching
Benefits
Avalanche, Gate, and Dynamic dV/dt
Ruggedness Improvements
Avalanche SOA and Described Capacitance
Improved dV/dt and dI/dt capability for body diodes
Lead-Free
Gate-Source Voltage (Vgs): - 30 V, 30 V
Vgs Threshold Voltage (Vgs th): 1.8 V Qg 161 nC is the gate charge.
-55 C is the minimum operating temperature.
175 C Pd is the maximum operating temperature.
520 W of power is dissipated.
Enhancement Channel Mode
Packaging: Tube
IRFP4668PBF MOSFET
IRFP4668 MOSFET N-CH 200V 130A TO-247AC
The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits. Manufacturer's Part: IRFP4668PBF Manufacturer: Infineon Technologies Description: IRFP4668 MOSFET N-CH 200V 130A TO-247AC IRFP4668 MOSFET DatasheetIRFP9140N
IRFP9240 MOSFET – 200V 12A P-Channel Power MOSFET TO-247 Package
IRFP9240 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
IRFPE40
IRFPE50
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Isolated Central Mounting Hole
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power levels
preclude the use of TO-220AB devices. The TO-247AC is
similar but superior to the earlier TO-218 package because of
its isolated mounting hole. It also provides greater creepage
distance between pins to meet the requirements of most
safety specifications.
IRFPF30
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Isolated Central Mounting Hole
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
IRFPF50
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Isolated Central Mounting Hole
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
IRFPG30
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Isolated Central Mounting Hole
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mounting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
IRFPG50
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
IRFPG50 MOSFET – 1000V 6.1A N-Channel Power MOSFET TO-247 Package
IRFPG50 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
