ULN2003 7 Darlington Transistor Arrays IC DIP-16 Package
₹14.00
The ULN2003 is high-voltage, high-current Darlington arrays each containing seven open collector Darlington pairs with common emitters. Each channel is rated at 500 mA and can withstand peak currents of 600 mA. Suppression diodes are included for inductive load driving and the inputs are pinned opposite the outputs to simplify board layout.
The ULN2003 is high-voltage, high-current Darlington arrays each containing seven open collector Darlington pairs with common emitters. Each channel is rated at 500 mA and can withstand peak currents of 600 mA. Suppression diodes are included for inductive load driving and the inputs are pinned opposite the outputs to simplify board layout. These versatile devices are useful for driving a wide range of loads including solenoids, relay DC motors, LED display filament lamps, thermal printheads and high-power buffers. The ULN2003 is supplied in a 16-pin DIP package with a copper leadframe to reduce thermal resistance.
Features:-
Seven Darlingtons per package
Output current 500 mA per driver (600 mA peak)
Output voltage 50 V
Integrated suppression diodes for inductive loads
Outputs can be paralleled for higher current
TTL/CMOS/PMOS/DTL compatible inputs
Input pins placed opposite to output pins to simplify layout
Specification:-
Parameter Value Unit
VO Output voltage 50 V
VI Input voltage (for ULN2002A/D – 2003A/D – 2004A/D) 30 V
IC Continuous collector current 500 mA
IB Continuous base current 25 mA
IF Clamping diode continuous current 350 mA
VR Clamping diode reverse voltage 50 V
TA Operating ambient temperature range – 40 to 85 ?C
TSTG Storage temperature range – 55 to 150 ?C
TJ Junction temperature 150 ?C
ESD Electrostatic discharge rating – HBM 2 kV
Related Document:-
ULN2003 IC Data Sheet
* Product Images are shown for illustrative purposes only and may differ from actual product.


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Specifications:-CP2102 IC
Parameter | Min | Max | Unit |
Ambient Temperature under Bias TBIAS | -55 | 125 | ?C |
Storage Temperature TSTG | -65 | 150 | ?C |
Voltage on VDD with respect to GND VDD | -0.3 | 4.2 | V |
Maximum Total Current through VDD and GND | - | 500 | mA |
Maximum Output Current sunk by RST or any I/O pin | - | 100 | mA |