MC33883HEG
₹210.00
Features Of? MC33883HEG
? The operating voltage for VCC is between 5.5 and 55 volts.
? The operational voltage of VCC2 is between 5.5 and 28 volts.
? Compatible I/O for LSTTL and CMOS
? Peak gate driver current of 1 A
? High side charge pump built-in
? Lockout due to undervoltage (UVLO)
? Voltage overload lockout (OVLO)
? 10A Sleep mode with global enable
? Allows for PWM at up to 100 kHz
? AEC-Q100 compliant qualification
Applications Of MC33883HEG
? Automotive: 12 V to high-voltage battery packs
? E-bikes, e-scooters
? Energy Storage Systems (ESS)
? Uninterruptible Power Supply (UPS)
? Battery junction box
Description OF MC33883HEG
The MC33883HEG is an H-bridge gate driver IC with an integrated charge pump and separate high and low side gate driver channels (sometimes referred to as a full-bridge pre-driver).
The device can potentially be configured as two independent high side gate drivers and two independent low side gate drivers since the gate driver channels are individually controlled by four different input pins. Ground is used as a reference for the low side channels.
The elevated side channels float. Large gate-charge MOSFETs can be driven and/or high pulse-width modulation (PWM) frequencies may be used thanks to the gate driver outputs’ ability to source and sink pulses of peak current of up to 1.0 A.
The low side gate drivers get a 15 V typical gate supply via an integrated linear regulator.
To switch on the gate, the output driver supplies a peak current of up to 1.0 A for 200 ns. 100 mA is constantly supplied after 200 ns to keep the gate charged. To shut off the gate, the output driver drains a large amount of current. For a 100 nF load, this current can reach a maximum of 1.0 A.
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