DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements

Ultra low gate charge ? Reduced gate drive requirement ? Enhanced 30 V VGS rating ? Isolated package ? High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) ? Sink to lead creepage distance = 4.8 mm ? Repetitive avalanche rated

? Isolated package ? High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) ? Sink to lead creepage distance = 4.8 mm ? Dynamic dV/dt rating ? Low thermal resistance