M24128-DRDW8TP/K

A 4K x 8 (32K bit) Serial Electrically Erasable PROM is the 24C32. This gadget was created for high-end, low-power uses like data collecting or personal communications. The 24C32 has an input cache with a capacity of eight 8-byte pages, or 64 bytes, allowing quick write loads. Additionally, it has a fixed 4K-bit block of ultra-high endurance memory for regularly changing data. Up to the 32K border, the 24C32 may read both randomly and sequentially. Up to eight 24C32 devices can share a bus with functional address lines, providing a maximum address space of 256K bits. This device is perfect for moderate POWER??non-volatile code and data applications thanks to advanced CMOS technology. The typical 8-pin plastic DIP and 8-pin surface mount SOIC packaging for the 24C32 are also available.   Features:- ? Operating voltage range: 4.5V to 5.5V - Maximum read current: 150 A at 5.5V - Peak write current: 3mA at 5.5V - Typical standby current: 1 A ? I2C compliant, industry-standard two-wire bus protocol with 100 kHz and 400 kHz modes ? Autonomous write cycle (including auto-erase) ? Switchable circuitry for data protection ? High Endurance Block has a guaranteed 10,000,000 Erase/Write cycles. - Guaranteed 1,000,000 E/W cycles for Standard Endurance Block ? Available in 8 byte page or byte modes. ? A 64-byte input cache with 1 page by 8 lines for quick write loads. ? Schmitt trigger with filtered inputs to reduce noise ? Ground bounce elimination by output slope control ? A typical write cycle time, byte or page, of 2 ms ? A single bus may support up to 8 chips and 256K bits of total memory. ? Protection from electrostatic discharge > 4000V ? 200-year data retention ? PDIP/SOIC 8-pin packages ? Variable temperatures Industrial (I): -40?C to +85?C Commercial (C): 0?C to +70?C

The SST89E5xxRD2 and SST89V5xxRD2 are FlashFlex51 family 8-bit microcontroller devices designed and manufactured using SST's unique and proprietary Super Flash CMOS semiconductor manufacturing technology. SST's clients gain significantly from the split-gate device structure and thick-oxide tunnelling injector in terms of cost and reliability. The devices are pin-for-pin compatible with ordinary 8051 microcontroller devices and use the 8051 instruction set. The devices include 16/24/40/72 K Byte of on-chip flash EEPROM programme memory that is divided into two separate programme memory blocks. The primary Block 0 has 8/16/32/64K Bytes of internal programme memory space, whereas the secondary Block 1 has 8K Bytes of internal programme memory space. The 8-KByte secondary block can be identified to the minimum address point in the 8/16/32/64 K Byte address space, as well as concealed from the programme counter and utilised as an independent EEPROM-like data store. In addition to the on-chip EEPROM programme memory of 16/24/40/72 K Bytes, the devices may address up to 64 K Bytes of external programme memory. In addition to 1024 x 8 bits of on-chip RAM, external RAM of up to 64 K Bytes may be addressed.

The 1024/2048/4096/8192/16384 bits of serial electrically erasable and programmable read-only memory (EEPROM) provided by the AT24C01A/02/04/08A/16A are structured as 128/256/512/1024/2048 words of 8 bits each. The gadget is designed with a variety of industrial and business applications in mind, where low-power and low-voltage functioning are crucial. The AT24C01A/02/04/08A/16A is accessible through a Two-wire serial interface and is offered in compact 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead MAP, 5-lead SOT23 (AT24C01A/AT24C02/AT24C04), 8-lead TSSOP, and 8-ball dBGA2 packages. There are other variants of the complete series in 2.7V (2.7V to 5.5V) and 1.8V (1.8V to 5.5V) voltage ranges. Features Low and Standard Voltage Operation: 2.7 (VCC = 2.7 to 5.5 V) and 1.8 (VCC = 1.8 to 5.5 V) ?128 x 8, 256 x 8, 512 x 8, 1024 x 8, or 2048 x 8 internal organisation (16K) Bidirectional Data Transfer Protocol, Schmidt Trigger, Filtered Inputs for Noise Suppression, Two-wire Serial Interface, and Compatibility at 100 kHz (1.8V) and 400 kHz (2.7V, 5V) 8-byte page (1K, 2K), 16-byte page, Write Protect Pin for Hardware Data Protection (4K, 8K, 16K) Writing Styles ?High-reliability? Endurance: 1 Million Write Cycles? Data Retention: 100 Years ?Partial Page Writes Allowed ?Self-timed Write Cycle (5 ms max) ?Automotive Grade and Lead-free/Halogen-free Devices Available ?5-lead SOT23,8-lead TSSOP,8-lead PDIP,8-lead JEDEC SOIC,8-lead MAP, and 8-ball dBGA2 Packages ?Die Sales: Bumped Wafers, Waffle Packs, and Wafer Forms

The Serial Electrically-Erasable Programmable Read-Only Memory (EEPROM) on the Atmel? AT25320B/640B has 32,768-/65,536-bits and is divided into 4,096/8,192 words with 8 bits each. The device is prepared for usage in a wide range of industrial and commercial settings where moderate and low-voltage functioning are critical requirements. The 8-lead JEDEC SOIC, 8-lead TSSOP, 8-lead UDFN, 8-lead XDFN, and 8-ball VFBGA packages for the AT25320B/640B are available in compact sizes. A 3-wire interface made up of Serial Data Input (SI), Serial Data Output (SO), and Serial Clock is used to access and enable the AT25320B/640B. (SCK). No further erase cycle is necessary before Write since every programming cycle is fully self-timed. Programming one of the four blocks of write security into the status register activates block write protection. For added data security, separate instructions for programme enable and programme disable are given. The WP pin offers hardware data protection to guard against unintentional write attempts to the status register. Any serial communication can be halted using the HOLD pin without having to restart the serial sequence.