TPD8E003DQDR

17.00

Features of TPD8E003DQDR

• Level 4 ESD Protection per IEC 61000-4-2:

– kV Contact Discharge 12

– Air-Gap Discharge at 15 kV

• Surge Protection per IEC 61000-4-5

– 3.5-A (8/20 µs)

• 9 pF IO Capacitance (Typical)

• 6 V is the DC breakdown voltage (Minimum)

• 100 nA Low Leakage Current (Maximum)

• -40°C to 85°C Industrial Temperature Range

• Ultra-Thin, Space-Saving WSON Package

 

Applications ofĀ  TPD8E003DQDR

• End Equipment

– Laptops and Desktops

– IP Phones

• Interfaces

– Keypads

– GPIO Headers

– Touchscreens

– Low-Speed Memory Interfaces

2900 in stock

SKU: CMTVS-0003 Category:
Description

Description of TPD8E003DQDR

The TPD8E003 device is a unidirectional electrostatic discharge (ESD) protection diode array based on transient voltage suppressors (TVS). The TPD8E003 is certified to dissipate ESD strikes over the maximum level allowed by international standard IEC 61000-4-2. (Level 4).

The WSON package of this gadget offers 8 channels of ESD protection. The TPD8E003 is frequently used for low-speed memory interfaces, GPIO, resistive touchscreens, and keypads. Additionally, for 2- and 4-channel ESD protection solutions, respectively, consider the TPD2E2U06 and TPD4E05U06.

The passive integrated circuit TPD8E003 is activated by voltages that are either higher than VBR or lower than the lower diodes Vf (–0.6 V). Through the internal diode network, voltages as high as 15 kV (air) can be diverted to ground during ESD incidents.

The device switches to passive mode when the voltages on the protected line drop below the trigger values of TPD8E003 (often within 10s of nanoseconds).

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