TPC8089-H
₹200.00
This N-Channel MOSFET employs cutting-edge trench technology to achieve high RDS(on) while maintaining a low gate charge. It can be applied to a wide range of situations.
Features：
1)VDS=40V,ID=6.7A,RDS(ON)<32mΩ@VGS=10V
2)Low gate charge.
3)Green device available.
4)Advanced high cell denity trench technology for ultra R
DS(ON).
5)Excellent package for good heat dissipation
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