Showing 2701–2712 of 3920 results

MJ15003 NPN Bipolar Power Transistor 140V 20A TO-3 Metal Package

214.00
MJ15003 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

MJ15004 PNP Bipolar Power Transistor 140V 20A TO-3 Metal Package

214.00
MJ15004 is a three layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

MJ2955 PNP Power Transistor TO-3 Metal Package

48.00
MJ2955 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

MJE13003 NPN Silicon Power Transistor (PACK OF 100)

500.00
description: 1.5 AMPERES NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS

MJE15032 NPN Bipolar Power Transistor 250V 8A TO-220 Package

74.00
MJE15032 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

MJE15033 PNP Bipolar Power Transistor 250V 8A TO-220 Package Product Code: EC-1604

74.00
MJE15033 is a three layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

MJE200 NPN Power Transistor 25V 5A TO-126 Package (Pack of 10)

220.00
MJE200 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

MJE2955T PNP Power Transistor 60V 10A TO-220 Package (Pack of 10)

220.00
MJE2955T is a three layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

MJE3055T NPN Power Transistor 60V 10A TO-220 Package (Pack of 10)

160.00
MJE3055T is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

MJE340 NPN Bipolar Power Transistor 300V 500mA TO-126 Package (Pack of 10)

100.00
MJE340 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.