IRF644 MOSFET – 250V 14A N-Channel Power MOSFET TO-220 Package
IRF644 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 125 W.
IRF720 MOSFET – 400V 3.3A N-Channel Power MOSFET TO-220 Package
IRF720 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
IRF730 MOSFET – 400V 5.5A N-Channel Power MOSFET TO-220 Package
IRF730 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 74 W.
IRF740 MOSFET – 400V 10A N-Channel Power MOSFET TO-220 Package
IRF740 is type of N-Channel enhancement mode power field effect transistors which are using planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
