MCT2E OPTOCOUPLER 6 PIN

The 6N138 consists of a GaA?As infrared emitting diode coupled with a split-Darlington output configuration. A high speed GaA?As Ired manufactured with an unique LPE junction, has the virtue of fast rise and fall time at low drive current.

FEATURES AND BENEFITS ? Low RDS(on) outputs ? Automatic current decay mode detection/selection ? Mixed and Slow current decay modes ? Synchronous rectification for low power dissipation ? Internal UVLO and thermal shutdown circuitry ? Crossover-current protection

The CNY74-2 consist of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package.

The TLP5214 is a highly integrated 4.0A output current IGBT gate drive photocoupler housed in a long creepage and clearance SO16L package. The TLP5214, a smart gate driver photocoupler, includes functions of IGBT desaturation detection, isolated fault status feedback, soft IGBT turn-off, active Miller cramping and under voltage lockout (UVLO). This photocoupler is suitable for driving IGBT and power MOSFET used in inverter applications. The TLP5214 consists two infrared LEDs and two high-gain and high-speed ICs. They realize high current, high-speed output control and output fault status feedback. ? Peak output current: ?4.0 A (max) ? Guaranteed performance over temperature: ?40?C to 110?C ? Supply current: 3.5 mA (max) ? Power supply voltage: 15 V to 30 V ? Threshold input current: IFLH = 6 mA (max) ? Switching time (tpLH / tpHL) : 150 ns (max) ? Common-mode transient immunity: ?35 kV/?s (min) ? Isolation voltage: 5000 Vrms (min)