The MBR150/160 series employs the Schottky Barrier principle in a
large area metalātoāsilicon power diode. Stateāofātheāart geometry
features epitaxial construction with oxide passivation and metal
overlap contact.
Features
⢠Low Reverse Current
⢠Low Stored Charge, Majority Carrier Conduction
⢠Low Power Loss/High Efficiency
⢠Highly Stable Oxide Passivated Junction
⢠These are PbāFree Devices*


MAECENAS IACULIS
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ADIPISCING CONVALLIS BULUM
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