IRF3710PBF
₹35.00
IRF3710PBF? Power MOSFET
IRF3710PBF is a 100V single N-channel Advanced HEXFET? Power MOSFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast-switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Mfr. No: IRF3710PBF
Mfr.: Infineon / IR
Description: MOSFET MOSFT 100V 57A 23mOhm 86.7nC
Datasheet: IRF3710PBF Datasheet (PDF)
Features of IRF3710PBF Power MOSFET
IRF3710PBF Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast-switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry
- Advanced process technology
- Ultra low on-resistance
- Dynamic dV/dt rating
- Fully avalanche rated
- 175?C Operating temperature
Applications of? IRF3710PBF Power MOSFET
Power Management
MAECENAS IACULIS
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ADIPISCING CONVALLIS BULUM
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