HCPL-4504 (A4504) OPTOCOUPLER DIP 8

The CNY74-2 consist of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package. The elements are mounted on one lead frame using a co planar technique, providing a fixed distance between input and output for highest safety requirements.

The H11F consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo detector.

The MCT6 Optocouplers have two channels for density applications. For four channel applications, two-packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar photo transistor optically coupled to a gallium arsenide infrared emitting diode.

The TLP5214 is a highly integrated 4.0A output current IGBT gate drive photocoupler housed in a long creepage and clearance SO16L package. The TLP5214, a smart gate driver photocoupler, includes functions of IGBT desaturation detection, isolated fault status feedback, soft IGBT turn-off, active Miller cramping and under voltage lockout (UVLO). This photocoupler is suitable for driving IGBT and power MOSFET used in inverter applications. The TLP5214 consists two infrared LEDs and two high-gain and high-speed ICs. They realize high current, high-speed output control and output fault status feedback. ? Peak output current: ?4.0 A (max) ? Guaranteed performance over temperature: ?40?C to 110?C ? Supply current: 3.5 mA (max) ? Power supply voltage: 15 V to 30 V ? Threshold input current: IFLH = 6 mA (max) ? Switching time (tpLH / tpHL) : 150 ns (max) ? Common-mode transient immunity: ?35 kV/?s (min) ? Isolation voltage: 5000 Vrms (min)