BSC020N03MSG 30V 100A TDSON-8 OptiMOS 3M
₹185.00
Description
These N-channel MOSFETs are optimized for 5V driver applications (Notebook, VGA, POL), with low FOMSW for high-frequency SMPS and very low on-resistance (RDS(on)) at VGS=4.5V. They are 100% avalanche tested, feature excellent gate charge x RDS(on) product (FOM), and are JEDEC qualified for target applications. They also offer superior thermal resistance, Pb-free plating, and are RoHS compliant and halogen-free according to IEC 61249-2-21.
Reviews (0)
Shipping & Delivery
MAECENAS IACULIS
Vestibulum curae torquent diam diam commodo parturient penatibus nunc dui adipiscing convallis bulum parturient suspendisse parturient a.Parturient in parturient scelerisque nibh lectus quam a natoque adipiscing a vestibulum hendrerit et pharetra fames nunc natoque dui.
ADIPISCING CONVALLIS BULUM
- Vestibulum penatibus nunc dui adipiscing convallis bulum parturient suspendisse.
- Abitur parturient praesent lectus quam a natoque adipiscing a vestibulum hendre.
- Diam parturient dictumst parturient scelerisque nibh lectus.
Scelerisque adipiscing bibendum sem vestibulum et in a a a purus lectus faucibus lobortis tincidunt purus lectus nisl class eros.Condimentum a et ullamcorper dictumst mus et tristique elementum nam inceptos hac parturient scelerisque vestibulum amet elit ut volutpat.
Related products
2SK2717 MOSFET – 900V 5A N-Channel Power MOSFET TO-220F Package
2SK2717 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
2SK3550 MOSFET – 900V 10A N-Channel Power MOSFET TO-3PF Packag
2SK3550?is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
BS107 MOSFET – 200V 250mA N-Channel Small Signal Mosfet TO-92 Package
BS107 N-Channel Mosfet is a type of field-effect transistor (FET) It has an insulated gate whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor or MISFET is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect-transistor.
Used for Power Supplies, Switching applications.
FDA50N50 MOSFET – 500V 48A N-Channel Power MOSFET TO-3PN Package
FDA50N50 MOSFET is high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on?state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
IRF1404 MOSFET – 40V 202A N-Channel HEXFET Power MOSFET TO-220 Package
IRF1404 Seventh Generation HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive.
IRF3205 MOSFET – 55V 110A N-Channel HEXFET Power MOSFET TO-220 Package
20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
IRF3415 MOSFET – 150V 43A N-Channel HEXFET Power MOSFET TO-220 Package
IRF3415 is fifth generation HEXFET? Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Reviews
There are no reviews yet.