ADM690AN ANALOG DEVICE

The CA3140 are integrated circuit operational amplifiers that combine the advantages of high voltage PMOS transistors with high voltage bipolar transistors on a single monolithic chip. The CA3140 BiMOS operational amplifiers feature gate protected MOSFET (PMOS) transistors in the input circuit to provide very high input impedance, very low input current, and high speed performance. The CA3140 operate at supply voltage from 4V to 36V (either single or dual supply). These operational amplifiers are internally phase compensated to achieve stable operation in unity gain follower operation, and additionally, have access terminal for a supplementary external capacitor if additional frequency roll-off is desired. Terminals are also provided for use in applications requiring input offset voltage nulling.

The LF351 is a low cost high speed JFET input operational amplifier with an internally trimmed input offset voltage (BI-FET IITM technology). The device requires a low supply current and yet maintains a large gain bandwidth product and a fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF351 is pin compatible with the standard LM741 and uses the same offset voltage adjustment circuitry. This feature allows designers to immediately upgrade the overall performance of existing LM741 designs. The LF351 may be used in applications such as high speed integrators, fast D/A converters, sample-and-hold circuits and many other circuits requiring low input offset voltage, low input bias current, high input impedance, high slew rate and wide bandwidth

The LF356 device are the first monolithic JFET input operational amplifiers to incorporate well matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET? Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.