AD7714AN-5 ANALOG DEVICE

The CA3140 are integrated circuit operational amplifiers that combine the advantages of high voltage PMOS transistors with high voltage bipolar transistors on a single monolithic chip. The CA3140 BiMOS operational amplifiers feature gate protected MOSFET (PMOS) transistors in the input circuit to provide very high input impedance, very low input current, and high speed performance. The CA3140 operate at supply voltage from 4V to 36V (either single or dual supply). These operational amplifiers are internally phase compensated to achieve stable operation in unity gain follower operation, and additionally, have access terminal for a supplementary external capacitor if additional frequency roll-off is desired. Terminals are also provided for use in applications requiring input offset voltage nulling.

This LF353 device is a low-cost, high-speed, JFET input operational amplifier with very low input offset voltage. It requires low supply current yet maintains a large gain-bandwidth product and a fast slew rate. In addition, the matched high-voltage JFET input provides very low input bias and offset currents. The LF353 can be used in applications such as high speed integrators, digital-to-analog converters, sample-and-hold circuits, and many other circuits. The LF353 is characterized for operation from 0?C to 70?C.

he LF398 devices are monolithic sample-and-hold circuits that use BI-FET technology to obtain ultrahigh DC accuracy with fast acquisition of signal and low droop rate. Operating as a unity-gain follower, DC gain accuracy is 0.002% typical and acquisition time is as low as 6 ?s to 0.01%. A bipolar input stage is used to achieve low offset voltage and wide bandwidth. Input offset adjust is accomplished with a single pin and does not degrade input offset drift. The wide bandwidth allows the LF398 to be included inside the feedback loop of 1-MHz operational amplifiers without having stability problems. Input impedance of 1010 ? allows high-source impedances to be used without degrading accuracy. P-channel junction FETs are combined with bipolar devices in the output amplifier to give droop rates as low as 5 mV/min with a 1-?F hold capacitor.