Showing 133–144 of 169 results

BSC070N10NS3G 100V 90A TDSON-8

178.00
“Designed for high-performance SMPS applications like synchronous rectification, featuring 100% avalanche testing and superior thermal resistance. N-channel MOSFET qualified per

BU205 NPN Power Transistor 700V 2.5A TO-3 Metal Package

90.00
BU205 is a device used to perform solely on specified inputs, to switch the forces of electrons. The unique design of this transistor includes individual electrons bouncing from wedge-shaped obstacles called deflectors. It is?used in horizontal deflection output?stages for color TV receives.

BU208D NPN High Voltage Fast switching Power Transistor 700V 5A TO-3 Metal Package

110.00
BU208D is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

BU406 NPN Bipolar Power Transistor 200V 7A TO-220 Package (Pack of 10)

300.00
BU406 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

BU407 NPN Bipolar Power Transistor 150V 7A TO-220 Package (Pack of 10)

220.00
BU407 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

BU508A NPN High Voltage Fast switching Power Transistor 700V 5A TO-3PN Package

75.00
BU508A is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

BUZ90 N-Channel Mosfet Power Transistor 600V 4.5A TO-220 Package

54.00
BUZ90 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

MJ15003 NPN Bipolar Power Transistor 140V 20A TO-3 Metal Package

214.00
MJ15003 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

MJ15004 PNP Bipolar Power Transistor 140V 20A TO-3 Metal Package

214.00
MJ15004 is a three layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

MJ2955 PNP Power Transistor TO-3 Metal Package

48.00
MJ2955 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

MJE13003 NPN Silicon Power Transistor (PACK OF 100)

500.00
description: 1.5 AMPERES NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS