IRF9Z34 MOSFET – 60V 18A P-Channel Power MOSFET TO-220 Package
IRF9Z34 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
IRFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET TO-220 Package
IRFB4110 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
IRFB4115PBF
Applications
SMPS Uninterruptible Power Supply with High Efficiency Synchronous Rectification
Circuits with High Frequency and Hard Switched Power Switching
Benefits
Avalanche, Gate, and Dynamic dv/dt Ruggedness Improvements
Avalanche SOA and Fully Characterized Capacitance
Improved dV/dt and dI/dt capability for body diodes
Halogen-Free, Lead-Free, and RoHS Compliant
Through Hole Mounting Style Package/Case: TO-220-3
N-Channel Transistor Polarity
The number of channels is one.
Vds - Drain-Source Disassembly Voltage: 150 volts
104 A - Id - Continuous Drain Current
9.3 mOhms - Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage: -20 V and 20 V
5 V - Gate-Source Threshold Voltage
77 nC - Qg - Gate Charge
- 55 C is the minimum operating temperature.
175 C is the maximum operating temperature.
Power Dissipation (Pd): 380 W
Enhancement Channel Mode
Packaging: Tube
DOINGTER brand
IRFB4321 MOSFET – 150V 85A N-Channel Power MOSFET TO-220 Package
IRFB4321 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
IRFBC30 MOSFET – 600V 3.6A N-Channel Power MOSFET TO-220 Package
IRFBC30 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
IRFBC40
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
IRFBC40 MOSFET – 600V 6.2A N-Channel Power MOSFET TO-220 Package
IRFBC40 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
IRFBE20
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
