Showing 121–132 of 225 results

IRF9540N

₹185.00
P-Channel 100 V 23A (Tc) 3.1W (Ta), 110W (Tc) Through Hole TO-262

IRF9540N

₹105.00
MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC

IRF9540N MOSFET – 100V 23A P-Channel Power MOSFET TO-220 PackageIRF9540N MOSFET – 100V 23A P-Channel Power MOSFET TO-220 Package

₹32.00
IRF9540N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

IRF9610 MOSFET – 200V 1.8A P-Channel Hexfet Power M

₹45.00
IRF9610 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

IRF9620

₹113.00
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry

IRF9630

₹110.00
? Dynamic dV/dt rating ? Repetitive avalanche rated ? P-channel ? Fast switching ? Ease of paralleling ? Simple drive requirements

IRF9630 MOSFET- 200V 6.5A P-Channel Power MOSFET TO-220 Package

₹31.50
IRF9630 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

IRF9634 MOSFET – 250V – 3.4A P-Channel Power MOSFET

₹56.00
Features
  • Advance process technology
  • Dynamic dv/dt rating
  • 150? operating temperature
  • Fast switching
  • P-channel
  • Fully avalanche rated

IRF9640

₹145.00
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ? Dynamic dV/dt rating ? Repetitive avalanche rated ? P-channel ? Fast switching ? Ease of paralleling ? Simple drive requirements

IRF9640 MOSFET – 200V 11A P-Channel Power MOSFET TO-220 Package

₹68.00
IRF9640 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

IRF9Z24 MOSFET – 60V 11A P-Channel Power MOSFET TO-220 Package

₹45.00
IRF9Z24 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.