CS5532-BSZ IC
CS5532/34 are highly integrated Analog-to-Digital Converters (ADCs) which use charge-balance techniques to achieve 24-bit performance. The ADCs are optimized for measuring low-level unipolar or bipolar signals in weigh scale, process control, scientific, and medical applications.
- Part Number: CS5532BSZ
- Manufacturer: Cirrus Logic Inc.
- Description: IC ADC 24BIT SIGMA-DELTA 20SSOP
- Detailed Description: 24 Bit Analog to Digital Converter 2 Input 1 Sigma-Delta 20-SSOP
D0 7805 VOLTAGE REGULATOR
DAC0800 8-Bit Digital to Analog D/A Converter IC DIP-16 Package
DAC0808 8-Bit Digital to Analog D/A Converter IC DIP-16 Package
DPA422PN
The DPA-Switch? IC family is a highly integrated solution for
DC-DC conversion applications with 16-75 VDC input.
DPA-Switch uses the same proven topology as TOPSwitch?,
cost effectively integrating a power MOSFET, PWM control, fault
protection and other control circuitry onto a single CMOS chip.
High performance features are enabled with three user
configurable pins. Hysteretic thermal shutdown is also provided.
In addition, all critical parameters (i.e. current limit, frequency,
PWM gain) have tight temperature and absolute tolerance, to
simplify design and reduce system cost.
DPA423PN
The DPA-Switch? IC family is a highly integrated solution for
DC-DC conversion applications with 16-75 VDC input.
DPA-Switch uses the same proven topology as TOPSwitch?,
cost effectively integrating a power MOSFET, PWM control, fault
protection and other control circuitry onto a single CMOS chip.
High performance features are enabled with three user
configurable pins. Hysteretic thermal shutdown is also provided.
In addition, all critical parameters (i.e. current limit, frequency,
PWM gain) have tight temperature and absolute tolerance, to
simplify design and reduce system cost.
DPA425PN
The DPA-Switch? IC family is a highly integrated solution for
DC-DC conversion applications with 16-75 VDC input.
DPA-Switch uses the same proven topology as TOPSwitch?,
cost effectively integrating a power MOSFET, PWM control, fault
protection and other control circuitry onto a single CMOS chip.
High performance features are enabled with three user
configurable pins. Hysteretic thermal shutdown is also provided.
In addition, all critical parameters (i.e. current limit, frequency,
PWM gain) have tight temperature and absolute tolerance, to
simplify design and reduce system cost.
DS1225AB-150+
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled unconditionally to avoid data corruption. The NV SRAMs can be used in place of existing 8k ? 8 SRAMs that are directly compatible with the common bytewide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for straightforward replacement while improving performance. The number of write cycles that can be performed is not limited, and no additional support circuitry is required for microprocessor connection.
DS1225AB-200+
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled unconditionally to avoid data corruption. The NV SRAMs can be used in place of existing 8k ? 8 SRAMs that are directly compatible with the common bytewide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for straightforward replacement while improving performance. The number of write cycles that can be performed is not limited, and no additional support circuitry is required for microprocessor connection.
DS1225AB-70+
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled unconditionally to avoid data corruption. The NV SRAMs can be used in place of existing 8k ? 8 SRAMs that are directly compatible with the common bytewide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for straightforward replacement while improving performance. The number of write cycles that can be performed is not limited, and no additional support circuitry is required for microprocessor connection.
DS1225AD-150+
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled permanently to avoid data corruption. The NV SRAMs can be used in place of conventional 8k ? 8 SRAMs that are directly compatible with the common byte wide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for direct replacement while improving performance. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
DS1225AD-170+
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled permanently to avoid data corruption. The NV SRAMs can be used in place of conventional 8k ? 8 SRAMs that are directly compatible with the common byte wide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for direct replacement while improving performance. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
