W25Q16JV-SSIQ
₹41.00
Features of W25Q16JVSSIQ
- SpiFlash Memories’ New Family
– 16M-bit/ 2M-byte W25Q16JV
– Common SPI: CLK, /CS, DI, and DO
– CLK, /CS, IO0, IO1 and Dual SPI
– CLK, /CS, IO0, IO1, IO2, IO3 for Quad SPI.
– Hardware and Software Reset
- Best Serial Flash Performance
– Single, Dual, and Quad SPI clocks at 133 MHz
– Dual/Quad SPI equal to 266/532MHz
– Continuous data transfer rate of 66 MB/S
– No fewer than 100K Program-Erase cycles per sector
– Retention of data for more than 20 years
- A productive “Continuous Read”
– Constant Read with 8/16/32/64-Byte Wrap
– Address memory with as few as 8 clocks
– Facilitates real XIP (execute in place) operation
– Performs better than X16 Parallel Flash
- Wide temperature range, low power
– Single 2.7 to 3.6 volt supply
– Operating range: -40 to +85 ?C.
– Operating temperature range: -40 to +105 ?C.
– Power-down, 1A.
- 4KB sectors and flexible architecture
– 4K/32K/64K-Byte Uniform Sector/Block Erase
– Programmable pages can hold up to 256 bytes.
– Delete/Suspend/Resume Program
- Features of Advanced Security
– Write-Protect in Software and Hardware
– Lock-Down Power Supply and
– Extraordinary OTP security
– Protection for the top/bottom and complement arrays
– Protection for individual blocks and sectors
– Each device has a 64-Bit unique ID.
– Register for Discoverable Parameters (SFDP)
– OTP locks on 3X256-Byte Security Registers
– Bits in the Volatile & Non-Volatile Status Register
- Effective Packaging for Space
– 8-pin SOIC 150/208 mils
– USON 8-pad 2X3mm/4X3mm
– XSON 8-pad 4×4-mm
– WSON 8-pad 6×5-mm
? 8-ball WLCSP
– For KGD and additional alternatives, contact Winbond
1306 in stock
Description of W25Q16JV
For systems with little room, power, or pins, the W25Q16JV (16M-bit) Serial Flash memory offers a storage option. Beyond the capabilities of standard Serial Flash devices, the 25Q series provides versatility and performance.
They are perfect for storing voice, text, and data as well as for code shadowing to RAM and direct code execution from Dual/Quad SPI (XIP). Current usage for power-down is as low as 1 A on a single 2.7V to 3.6V power supply, which is all the device needs to function.
There are 8,192 programmable pages with 256 bytes apiece in the W25Q16JV array. It is possible to programme 256 bytes at once. Groups of 16 pages (4KB sector erase), groups of 128 pages (32KB block erase), groups of 256 pages (64KB block erase), or the entire chip can be erased (chip erase).
32 erasable blocks and 512 erasable sectors can each be erased on the W25Q16JV. Applications that need to store data and parameters can operate with more flexibility thanks to the compact 4KB sectors.
The W25Q16JV offers Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2, and I/O3 in addition to the industry-standard Serial Peripheral Interface (SPI).
When employing the Fast Read Dual/Quad I/O instructions, SPI clock speeds of up to 133MHz are supported, giving equivalent clock rates of 266MHz (133MHz x 2) for Dual I/O and 532MHz (133MHz x 4) for Quad I/O. Standard Asynchronous 8- and 16-bit Parallel Flash memory can’t compete with these transfer rates.
The device also supports three 256-byte security registers, a 64-bit unique serial number, and JEDEC standard manufacturer and device ID.
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M24128-DRDW8TP/K
- Support for all I2C bus modes? 1 MHz/ 400 kHz/ 100 kHz
- Memory bank- An EEPROM with 128 Kbits (16 Kbytes)
- Page Size in Bytes: 64
- In addition Make a locked page.
- Wider range of temperatures and voltages?40 to 105 degrees Celsius; 1.7 to 5.5 volts
- Schmitt trigger inputs are used to filter noise.
- Cycle time for short writes- Byte Write in 4 milliseconds- Page Write in 4 milliseconds
- Express cycling stamina. -4,000,000 Write Cycles at 25 ?C, - 1,2,000,000 Write cycles at 85 ?C & ? 900 k Cycles of writing at 105 ?C
- Data storage- at 105 ?C for more than 50 years., 200 yr at 55 ?C
- ESD Defense (Human Body Model)? 4000 V
- Packing is- Halogen-free and RoHS compliant
- SMD/SMT mounting style
- Case/Package: TSSOP-8
- Interface types: I2C and 2-Wire
- Size of Memory: 128 kbit
- Arrangement: 16 k x 8
- Minimum Supply Voltage: 1.7 V
- Maximum Supply Voltage: 5.5 V
- 40 C for the minimum operating temperature
- 105 C is the maximum operating temperature.
- 1 MHz is the maximum clock frequency.
- Time to Access: 450 ns
- Retention of Data: 200 Years
- Maximum Supply Current: 2 mA
- The M24128-DRD series
- mandatory requirement: AEC-Q100
- Packaging: Cut Tape and Reel
- Maximum Active Read Current: 2 mA
- STMicroelectronics is a brand.
- 2 mA is the operating supply current.
- Voltage Range for Operating Supply: 1.8 to 5.5 V
- Type of Product: EEPROM
M25P40-VMN6TPB
- ?4 Mbit of Flash memory
- ?2.3 V to 3.6 V single supply voltage
- ?SPI bus compatible serial interface
- ?75 MHz clock rate (maximum)
- ?Page Program (up to 256 bytes) in 0.8 ms (typical)
- ?Sector Erase (512 Kbit) in 0.6 s (typical)
- ?Bulk Erase (4 Mbit) in 4.5 s (typical)
- ?Deep Power-down mode 1 ?A (typical)
- ?Hardware Write Protection: protected area size defined by three non-volatile bits (BP0, BP1 and BP2)
- ?Electronic signatures ? JEDEC standard two-byte signature (2013h) ? Unique ID code (UID) with 16 bytes read only, available upon customer request ? RES instruction, one-byte, signature (12h), for backward compatibility
- ?Packages ? RoHS compliant
- ?Automotive grade parts available
- Memory Size -
- Supply Voltage - Min: 2.3 V
- Supply Voltage - Max: 3.6 V
- Active Read Current - Max: 8 mA
- Interface Type: SPI
- Maximum Clock Frequency: 75 MHz
- Organisation: 512 k x 8
- Data Bus Width: 8 bit
- Timing Type: Synchronous
- Minimum Operating Temperature: - 40 C
- Maximum Operating Temperature: + 85 C
- Packaging: Reel / Cut Tape
- Memory Type: NOR
- Product Type: NOR Flash
- Speed: 75 MHz
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