TPD4S009DCKR

48.00

Features of TPD4S009

  • IEC 61000-4-2 ESD Protection Level 4

    – Contact Discharge at 8 kV

     

  • Surge protection per IEC 61000-4-5

    – 2.5A (8/20µs)

  • 0.8 pF I/O Capacitance (Typical)

     

  • 10 nA Low Leakage Current (Typical)

     

  • Supports 3-dB Bandwidth > 4 GHz High-Speed Differential Data Rates

     

  • Exceptionally low matching capacitance between pairs of differential signal

     

  • For the device, Ioff Feature

     

  • -40°C to 85°C in the industrial temperature range

     

  • Space-saving package options and simple straight-through routing

 

ApplicationsĀ 

  • End-Use Gear

    – Setting-Top Boxes

    – DTVs

    – Computers, laptops

    – Selling points for electronics (ESOP)

  • Interfaces- USB 2.0

    – HDMI 1.4

    – LVDS

    – SAT

    – An Ethernet

    – The FireWire

 

1690 in stock

SKU: CMTVS-0004 Category:
Description

Description of TPD4S009

Four-channel TVS diode arraysĀ  are designed to prevent electrostatic discharge (ESD). With an 8-kV contact discharge ESD protection, TPD4S009 and TPD4S010 are rated to dissipate contact ESD strikes at the highest level allowed by the international standard IEC 61000-4-2 (Level 4).

For high-speed differential data rates (3-dB bandwidth > 4 GHz), these devices’ low capacitance (0.8-pF) and outstanding differential signal pair matching (0.05-pF line-line capacitance for the TPD4S009DRY) make it possible for this device to protect the transient voltage suppression circuit.

There are four packaging options for the device : DBV, DCK, DGS, and DRY. The twin pair high-speed differential lines package option with the biggest available space savings is the TPD4S009DRYR. The industry-standard DQA package is made available for the TPD4S010.

The TPD4S009DGSR and TPD4S010DQAR provide flow-through board layout alternatives to minimise signal hiccups typically brought on by D+ and D- signal routing inconsistencies.

For P2P compatibility with TPD4S010DQAR, see also TPD4E05U06DQAR. Higher IEC ESD protection, reduced capacitance, lower RDYN, lower DC breakdown voltage, and lower clamping voltage are all features of this device

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