BDX33C NPN Power Darlington Transistor 100V 10A TO-220 Package (Pack of 10)
BDX34C PNP Power Darlington Transistor 100V 10A TO-220 Package (Pack of 10)
BDX53C NPN Power Darlington Transistor 100V 8A TO-220 Package (Pack of 10)
BDX54C PNP Power Darlington Transistor 100V 8A TO-220 Package (Pack of 10)
BF199 NPN RF Transistor 25V 50mA TO-92 Package (Pack of 10)
BF199 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
BF245 N-Channel Transistor
BF256 N-Channel RF Transistor
BF494 NPN Medium Frequency Transistor 20V 30mA TO-92 Package (Pack of 10)
BF494 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
BFW10 Philips N-Channel Depletion JFET 30V 20mA TO-72 Package
BFW10 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
BFW11 Philips N-Channel Depletion JFET 30V 10mA TO-72 Package
BFW11 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
BGU7005
Benefits and features of BGU7005
- Covers the entire GNSS L1 range, 1559 to 1610 MHz
- Noise figure (NF) is equal to 0.85 dB.
- Increase 16.5 dB
- A lot of input Pi(1dB), or 1 dB compression point, is 11 dBm.
- High IP3i out of band of 9 dBm
- 1.5 to 3.1 volts is the supply voltage.
- Consumption of current in power-saving mode is 1 A.
- Optimized performance at 4.5 mA, a low supply current
- Output matching that is integrated
- Only needs one supply decoupling capacitor and one input matching inductor.
- Decoupled DC input and output
- All pins have ESD protection (HBM > 2 kV).
- Temperature-stabilized bias included for simple design
- Small leadless 6-pin package 1.45 mm, 1 mm, and 0.5 mm
- Transit frequency of 110 GHz using SiGe:C technology
