TOP414G
TOP414G-TL
TOP414GN
TOP414GN-TL
TPC8089-H
This N-Channel MOSFET employs cutting-edge trench technology to achieve high RDS(on) while maintaining a low gate charge. It can be applied to a wide range of situations.
Features?
1)VDS=40V,ID=6.7A,RDS(ON)<32m?@VGS=10V
2)Low gate charge.
3)Green device available.
4)Advanced high cell denity trench technology for ultra R
DS(ON).
5)Excellent package for good heat dissipation