TLE2142CD
The TLE214x and TLE214xA devices are high-performance, internally compensated operational amplifiers
built using Texas Instruments complementary bipolar Excalibur process. The TLE214xA is a tighter offset
voltage grade of the TLE214x. Both are pin-compatible upgrades to standard industry products.
The design incorporates an input stage that simultaneously achieves low audio-band noise of 10.5 nV/?Hz with
a 10-Hz 1/f corner and symmetrical 40-V/?s slew rate typically with loads up to 800 pF. The resulting low
distortion and high power bandwidth are important in high-fidelity audio applications. A fast settling time of
340 ns to 0.1% of a 10-V step with a 2-k?/100-pF load is useful in fast actuator/positioning drivers. Under similar
test conditions, settling time to 0.01% is 400 ns.
TLE2142CP
TLP250H
1. Applications
? Industrial Inverters
? Air Conditioner Inverters
? IGBT Gate Drivers
? MOSFET Gate Drivers
? Induction Cooktop and Home Appliances
2. General
The TLP250H is a photocoupler in a DIP8 package that consists of a GaA?As infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. It provides guaranteed performanceand specifications at temperatures up to 125.?The TLP250H has an internal Faraday shield that provides a
guaranteed Common-mode transient immunity of ?40 kV/?s. It has a totem-pole output that can both sink and source current. The TLP250H is ideal for IGBT and power MOSFET gate drive.
3. Features
(1) Buffer logic type (totem pole output)
(2) Output peak current:?2.5 A (max)
(3) Operating temperature: -40 to 125
(4) Supply current: 3 mA (max)
(5) Supply voltage: 10 to 30 V
(6) Threshold input current: 5 mA (max)
(7) Propagation delay time: 500 ns (max)
(8) Common-mode transient immunity:?40 kV/?s (min)
(9) Isolation voltage: 3750 Vrms (min)
TLP281-4
TLP291-4 consists of photo transistor, optically coupled to a
gallium arsenide infrared emitting diode. TLP291-4 is housed in the SO16
package, very small and thin coupler.
Since TLP291-4 are guaranteed wide operating temperature (Ta=-55 to 110
?C), it?s suitable for high-density surface mounting applications such as
programmable controllers and hybrid ICs
TLP293-4GB-TP.E
Features ofĀ TLP293-4GB-TP.E
ļ¬ Collector-Emitter Voltage : 80 V (min)
ļ¬ Current Transfer Ratio : 50% (min) GB rank: 100% (min)
ļ¬ Isolation Voltage : 3750 Vrms (min)
ļ¬ Operation temperature range: -55 to 125 ĖC
Programmable Controllers
Switching Power Supplies
Simplex/Multiplex Data Transmissions
TLP5214(E)
The TLP5214 is a highly integrated 4.0A output current IGBT gate drive photocoupler housed in a long creepage and clearance SO16L package.
The TLP5214, a smart gate driver photocoupler, includes functions of IGBT
desaturation detection, isolated fault status feedback, soft IGBT turn-off, active
Miller cramping and under voltage lockout (UVLO).
This photocoupler is suitable for driving IGBT and power MOSFET used in
inverter applications.
The TLP5214 consists two infrared LEDs and two high-gain and high-speed ICs.
They realize high current, high-speed output control
and output fault status feedback.
? Peak output current: ?4.0 A (max)
? Guaranteed performance over temperature: ?40?C to 110?C
? Supply current: 3.5 mA (max)
? Power supply voltage: 15 V to 30 V
? Threshold input current: IFLH = 6 mA (max)
? Switching time (tpLH / tpHL) : 150 ns (max)
? Common-mode transient immunity: ?35 kV/?s (min)
? Isolation voltage: 5000 Vrms (min)
TLP523
The TLP5231 is a 2.5 A dual-output IGBT gate pre-drive photocoupler including highly integrated multi-functional
IC that is housed in SO16L package having a long creepage and clearance. This photocoupler is suitable as a predriver to driver power devices via external p- and n- channel MOSFET as buffers.
The smart gate driver photocoupler includes functions of IGBT/power MOSFET desaturation detection, isolated
fault status feedback, configurable soft gate turn-off, and under voltage lockout (UVLO).
The TLP5231 consists of two infrared light-emitting diodes (LEDs) and two high-gain and high-speed lightreceiving IC chips. Thereby, they realize the control of output current and the feedback function of the fault signal
while keeping a insulation between a primary side and secondary side electrically.
TLP701F(TP,F)
TLP701F consists of a GaA?As light-emitting diode and an integrated photodetector. This unit comes in a 6-lead SDIP package. The TLP701F is half the size of an 8-pin DIP and meets international safety standards for reinforced insulation class. As a result, the mounting area in equipment requiring safety standard certification can be reduced. The TLP701F is appropriate for gate driving IGBTs or power MOSFETs. The TLP701F, in particular, is capable of "direct" gate driving of low-power IGBTs.
Absolute Maximum ratings and electrical characteristics are the same as The TLP701 technical data sheets.
? Peak output current : ?0.6 A (max)
? Guaranteed performance over temperature: ?40 to 100?C
? Supply current : 2 mA (max)
? Power supply voltage : 10 to 30 V
? Threshold input current : IFLH = 5 mA (max)
? Switching time (tpLH/tpHL) : 700 ns (max)
? Common mode transient immunity : ?10 kV/?s (min)
? Isolation voltage : 5000 Vrms (min)
