IRFZ44N
Advanced HEXFET? Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry
IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET TO-220 Package
IRFZ44N is specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175?C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
IRFZ44NPBF N-Channel MOSFET
IRFZ44NPBF N-Channel MOSFET TO-220 Package
IRFZ44NPBF is a N-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Mfr. No: IRFZ44NPBF Mfr.: Infineon / IR Description: MOSFET MOSFET 55V 49A 17.5mOhm 42nC IRFZ44NPBF DatasheetIRFZ44V
Advanced HEXFET? Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
IRFZ46N
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175?C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Advanced HEXFET? Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry
IRFZ48N
Advanced HEXFET? Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
IRFZ48N MOSFET – 55V 64A N-Channel Power MOSFET TO-220 Package
IRFZ48N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRG4BC30UD IGBT – 600V UltraFast 8-60 kHz Copack IGBT
The IRG4BC30UD is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. Its is designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs. It is optimized for specific application conditions. The generation 4 IGBTs offers the highest efficiencies available. The?HEXFRED diodes optimized for performance with IGBTs and the minimized recovery characteristics require less/no snubbing.
