Showing 1849–1860 of 3972 results

IRF9510

30.00
P-Channel 100 V 4A (Tc) 43W (Tc) Through Hole TO-220AB

IRF9510 MOSFET – 100V – 4A P-Channel Power MOSFET

52.00
Best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

IRF9520

30.00
P-Channel 100 V 6.8A (Tc) 60W (Tc) Through Hole TO-220AB

IRF9520 MOSFET – 100V 6.8A P-Channel Power MOSFET TO-220 Package

33.00
IRF9520 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

IRF9530 MOSFET- 100V 14A P-Channel Power MOSFET TO-220 Package

26.00
IRF9530 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

IRF9530N

74.00
MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC

IRF9540N

185.00
P-Channel 100 V 23A (Tc) 3.1W (Ta), 110W (Tc) Through Hole TO-262

IRF9540N

105.00
MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC

IRF9540N MOSFET – 100V 23A P-Channel Power MOSFET TO-220 PackageIRF9540N MOSFET – 100V 23A P-Channel Power MOSFET TO-220 Package

32.00
IRF9540N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.