Showing 1729–1740 of 3972 results

IN5378B(100V)

15.00
a silicon semiconductor device that permits current to flow in either a forward or reverse direction. The diode consists of a special, heavily doped p-n junction, designed to conduct in the reverse direction when a certain specified voltage is reached. The Zener diode has a well-defined reverse-breakdown voltage, at which it starts conducting current, and continues operating continuously in the reverse-bias mode without getting damaged. Additionally, the voltage drop across the diode remains constant over a wide range of voltages, a feature that makes Zener diodes suitable for use in voltage regulation

IN5379B(110V)

15.00
a silicon semiconductor device that permits current to flow in either a forward or reverse direction. The diode consists of a special, heavily doped p-n junction, designed to conduct in the reverse direction when a certain specified voltage is reached. The Zener diode has a well-defined reverse-breakdown voltage, at which it starts conducting current, and continues operating continuously in the reverse-bias mode without getting damaged. Additionally, the voltage drop across the diode remains constant over a wide range of voltages, a feature that makes Zener diodes suitable for use in voltage regulation

IN5380B(120V)

15.00
a silicon semiconductor device that permits current to flow in either a forward or reverse direction. The diode consists of a special, heavily doped p-n junction, designed to conduct in the reverse direction when a certain specified voltage is reached. The Zener diode has a well-defined reverse-breakdown voltage, at which it starts conducting current, and continues operating continuously in the reverse-bias mode without getting damaged. Additionally, the voltage drop across the diode remains constant over a wide range of voltages, a feature that makes Zener diodes suitable for use in voltage regulation

IN5383B(150V)

15.00
a silicon semiconductor device that permits current to flow in either a forward or reverse direction. The diode consists of a special, heavily doped p-n junction, designed to conduct in the reverse direction when a certain specified voltage is reached. The Zener diode has a well-defined reverse-breakdown voltage, at which it starts conducting current, and continues operating continuously in the reverse-bias mode without getting damaged. Additionally, the voltage drop across the diode remains constant over a wide range of voltages, a feature that makes Zener diodes suitable for use in voltage regulation

IN5384B(160V)

15.00
a silicon semiconductor device that permits current to flow in either a forward or reverse direction. The diode consists of a special, heavily doped p-n junction, designed to conduct in the reverse direction when a certain specified voltage is reached. The Zener diode has a well-defined reverse-breakdown voltage, at which it starts conducting current, and continues operating continuously in the reverse-bias mode without getting damaged. Additionally, the voltage drop across the diode remains constant over a wide range of voltages, a feature that makes Zener diodes suitable for use in voltage regulation

IN5386B (180V )

15.00
DESCRIPTION: The 5 Watt Zener diode series features precise specifications and enhanced performance due to silicon-oxide passivated junctions, housed in a robust axial lead, transfer-molded plastic package for reliable environmental protection.

IN5388B(200V)

15.00
a silicon semiconductor device that permits current to flow in either a forward or reverse direction. The diode consists of a special, heavily doped p-n junction, designed to conduct in the reverse direction when a certain specified voltage is reached. The Zener diode has a well-defined reverse-breakdown voltage, at which it starts conducting current, and continues operating continuously in the reverse-bias mode without getting damaged. Additionally, the voltage drop across the diode remains constant over a wide range of voltages, a feature that makes Zener diodes suitable for use in voltage regulation

INA106 Difference Amplifier IC DIP-8

680.00
The INA106 is a monolithic Gain = 10 differential amplifier consisting of a precision op amp and on-chip metal film resistors. The resistors are laser trimmed for accurate gain and high common-mode rejection. Excellent TCR tracking of the resistors maintains gain accuracy and common-mode rejection over temperature. The differential amplifier is the foundation of many commonly used circuits. The INA106 provides this precision circuit function without using an expensive resistor network. The INA106 is available in 8-pin plastic DIP and SO-8 surface-mount packages.

INA114 Precision Instrumentation Amplifier IC DIP-8

620.00
The INA114 is a low cost, general purpose instrumentation amplifier offering excellent accuracy. Its versatile 3-op amp design and small size make it ideal for a wide range of applications. A single external resistor sets any gain from 1 to 10,000. Internal input protection can withstand up to ?40V without damage. The INA114 is laser trimmed for very low offset voltage (50?V), drift (0.25?V/?C) and high common-mode rejection (115dB at G = 1000). It operates with power supplies as low as ?2.25V, allowing use in battery operated and single 5V supply systems

INA117P

628.00
The INA117 is a precision unity-gain difference amplifier with very high common-mode input voltage range. It is a single monolithic IC consisting of a precision op amp and integrated thin-film resistor network. It can accurately measure small differential voltages in the presence of common-mode signals up to ?200V. The INA117 inputs are protected from momentary common-mode or differential overloads up to ?500V