Showing 1537–1548 of 3920 results

FQP4N90C

140.00
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts

FQP50N06

123.00
These N channel enhancement mode power field effect transistors? are produced. This advanced technology has been especially tailored to minimize on state resistance

FQPF3N80C

134.00
N Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology.

FQPF6N60C

25.00
N-Channel 600 V 5.5A (Tc) 40W (Tc) Through Hole TO-220F-3

FQPF6N80C

180.00
N-Channel 800 V 5.5A (Tc) 51W (Tc) Through Hole TO-220F-3

FQPF6N90C

180.00
N-Channel 900 V 6A (Tc) 56W (Tc) Through Hole TO-220F-3

FQPF7N80C

192.00
N-Channel 800 V 6.6A (Tc) 56W (Tc) Through Hole TO-220F-3

FQPF8N80C

234.00
N-Channel 800 V 8A (Tc) 59W (Tc) Through Hole TO-220F-3

FSBB20CH60 IGBT Module – 600V 20A Power Conversion IGBT Module

1,500.00
FSBB20CH60 is a Motion SPM??3 series that ON Semiconductor has developed to provide a very compact and high performance inverter solution for AC motor drives in low-power applications such as air conditioners. It combines optimized circuit protections and drives matched to low-loss IGBTs. The system reliability is further enhanced by the integrated under-voltage lock-out and over-current protection. The high speed built-in HVIC provides optocoupler- less single-supply IGBT gate driving capability that further reduces the overall size of the inverter system. Each phase leg current of the inverter can be monitored thanks to three separate negative dc terminals.