Fan7390MX SMD
The FAN7390 is a monolithic high? and low?side gate?drive IC,
which can drive high speed MOSFETs and IGBTs that operate up to
600 V. It has a buffered output stage with all NMOS transistors
designed for high pulse current driving capability and minimum
cross?conduction.
ON Semiconductor?s high?voltage process and common?mode
noise canceling techniques provide stable operation of the high?side
driver under high dv/dt noise circumstances. An advanced level shift
circuit offers high?side gate driver operation up to VS = ?9.8 V
(typical) for VBS = 15 V
FAN7392 High and Low-Side Gate-Drive IC DIP-14 Package
FDA50N50 MOSFET – 500V 48A N-Channel Power MOSFET TO-3PN Package
FDA50N50 MOSFET is high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on?state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDP090N10 MOSFET – 100V 75A N-Channel Power Trench MOSFET TO-220 Package
FDP090N10 N-Channel MOSFET is produced using ?advanced PowerTrench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
FGA25N120
Using advanced field stop trench technology,
1200V trench IGBTs offer superior conduction and switching
performances for soft switching applications. The device can
operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and
microwave oven.
FGA25N120ANTD IGBT – 1200V 25A NPT Trench IGBT
FQA9N90C
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor?s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
FQP12N60C
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild?s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology
