Features
⢠Extremely Low vF
⢠Low Power Loss/High Efficiency
⢠Highly Stable Oxide Passivated Junction
⢠Low Stored Charge, Majority Carrier Conduction
⢠PbāFree Packages are Available
These devices employ the Schottky Barrier principle in a large area
metalātoāsilicon power diode. Stateāofātheāart geometry features
epitaxial construction with oxide passivation and metal overlap
contact


MAECENAS IACULIS
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ADIPISCING CONVALLIS BULUM
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