IR2110 High and Low Side Driver IC DIP-14 Package
IR2110 High And Low Side Driver IC ? DIP-14 Package
IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts. IR2110(S)PbF/IR2113(S)PbF.- Part Number?IR2110
- Manufacturer? Infineon Technologies
- Description:IC GATE DRVR HALF-BRIDGE 16SOIC
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IR2113 High and Low Side Driver IC DIP-14 Package
IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
- Part Number IR2113
- Manufacturer: Infineon Technologies
- Description: IC GATE DRVR HALF-BRIDGE 14DIP
- Detailed Description: Half-Bridge Gate Driver IC Non-Inverting 14-DIP
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Any cabled I/O can be subjected to electrical noise transients from various sources. These noise transients can cause damage to the transceiver and/or nearby sensitive circuitry if they are of sufficient magnitude and duration. These isolated devices can significantly increase protection and reduce the risk of damage to expensive control circuits.
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L30960-N3400-A400
Features of L30960-N3400-A400
- LTE (20,8,3,7,1); 3G (8,3); and 2G Dual Band PLS8-E
- PLS8-US: 3G (5,4,2), 2G Quad Band, and LTE (17,5,4,2).
- LTE (1,3,19); 3G; PLS8-J (1,19)
- PLS8-X: 3G (5,4,2), 2G Quad Band, and LTE (13,17,5,4,2).
- LTE PLS8-V: (13,4,2)
- LTE (2x2 DL-MIMO; FDD 3GPP Release 9)
- 3GPP Release 8; UMTS/HSPA (FDD); Rx diversity
- 3GPP Release 6; DARP/SAIC; GSM/GPRS/EDGE
- SIM Application Toolkit, version 99 of the 3GPP
- Using AT instructions to control (Hayes, TS 27.007, TS 27.005)
- Complete GPS/GLONASS integration (Qualcomm gpsOne Gen8A)
- 3.3 to 4.2 V supply voltage range, especially tuned for low power usage
- Dimensions are 29 mm by 33 mm by 2,2 mm (PLS8-V/-X: H=2,9 mm).
- Range of Operation: -40 ?C to +85 ?C
- EuP support, RoHS and REACH compliance
- Multiple composite modes and a Linux/Mac-compliant mode are supported by the USB interface.
- USB-based firmware update
- BIP (Bearer Independent Protocol) (Bearer Independent Protocol)
- From Rel.3.0 and for PLS8-X /-V, IP services (Client & Server, TCP/IP & UDP, Transparent & Nontransparent) are available.
- According to 3GPP TS 27.010, a multiplexer
- Carrier Switching Automatic (PLS8-X)