GT50JR22
₹330.00
(1) 6.5th generation
(2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip.
(3) Enhancement mode
(4) High-speed switching
IGBT : tf
= 0.05 µs (typ.) (IC = 50 A)
FWD : trr = 0.35 µs (typ.) (IF = 15 A)
(5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A)
(6) High junction temperature : Tj
= 175 (max)
706 in stock (can be backordered)
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