The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled unconditionally to avoid data corruption. The NV SRAMs can be used in place of existing 8k × 8 SRAMs that are directly compatible with the common bytewide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for straightforward replacement while improving performance. The number of write cycles that can be performed is not limited, and no additional support circuitry is required for microprocessor connection.
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