IRFPG50 MOSFET – 1000V 6.1A N-Channel Power MOSFET TO-247 Package
₹182.00
IRFPG50 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
998 in stock (can be backordered)
Reviews (0)
Shipping & Delivery
MAECENAS IACULIS
Vestibulum curae torquent diam diam commodo parturient penatibus nunc dui adipiscing convallis bulum parturient suspendisse parturient a.Parturient in parturient scelerisque nibh lectus quam a natoque adipiscing a vestibulum hendrerit et pharetra fames nunc natoque dui.
ADIPISCING CONVALLIS BULUM
- Vestibulum penatibus nunc dui adipiscing convallis bulum parturient suspendisse.
- Abitur parturient praesent lectus quam a natoque adipiscing a vestibulum hendre.
- Diam parturient dictumst parturient scelerisque nibh lectus.
Scelerisque adipiscing bibendum sem vestibulum et in a a a purus lectus faucibus lobortis tincidunt purus lectus nisl class eros.Condimentum a et ullamcorper dictumst mus et tristique elementum nam inceptos hac parturient scelerisqueĀ vestibulum amet elit ut volutpat.
Related products
IRF3415 MOSFET – 150V 43A N-Channel HEXFET Power MOSFET TO-220 Package
IRF3415 is fifth generation HEXFETĀ® Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
2SK2698 MOSFET – 500V 15A N-Channel Power MOSFET TO-3PN Package
2SK2698 N-Channel enhancement mode power field effect transistors are produced using Toshiba proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
2SK1317 MOSFET – 1500V 2.5A N-Channel Power MOSFET TO-3P Package
2SK1317 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
IRF3205 MOSFET – 55V 110A N-Channel HEXFET Power MOSFET TO-220 Package
20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
BS170 MOSFET – 60V 500mA N-Channel Small Signal MOSFET TO-92 Package
BS170 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
2SK1118 MOSFET – 600V 6A N-Channel Power MOSFET TO-220F Package
2SK1118 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
IRF3205 MOSFET – 55V 110A N-Channel HEXFET Power MOSFET TO-220 Package
IRF3205 is Advanced HEXFETĀ® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF3710 MOSFET – 100V 57A N-Channel HEXFET Power MOSFET TO-220 Package
IRF3710 is Advanced HEXFETĀ® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Reviews
There are no reviews yet.