Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Features of irfp250n Mosfet
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
- Ease of paralleling
- Simple drive requirements
- Lead-Free
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 200V |
| Continuous Drain Current (Id) | 30A |
| Drain-Source Resistance (Rds On) | 0.075Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 123 nC |
| Operating Temperature Range | -55 – 175Ā°C |
| Power Dissipation (Pd) | 214W |
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