Irf3710Pbf
Irf3710Pbf
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C8051F120-GQR, Silicon Laboratories
C8051F120-GQR 8051 Microcontrollers ₹1,100.00
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IRFZ44NPBF
IRFZ44NPBF N-Channel MOSFET ₹15.00

IRF3710PBF

₹35.00

IRF3710PBFĀ  Power MOSFET

IRF3710PBF is a 100V single N-channel Advanced HEXFETĀ® Power MOSFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast-switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Mfr. No: IRF3710PBF
Mfr.: Infineon / IR
Description: MOSFET MOSFT 100V 57A 23mOhm 86.7nC
Datasheet: IRF3710PBF Datasheet (PDF)

IRF3710PBF Datasheet

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SKU: CMMo-0220 Categories: ,
Description

Features of IRF3710PBF Power MOSFET

IRF3710PBF Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast-switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry

  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dV/dt rating
  • Fully avalanche rated
  • 175Ā°C Operating temperature

Applications ofĀ  IRF3710PBF Power MOSFET

Power Management

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